General Electric Silicon Carbide Inverter
Overview
Topology
- GE inverter implements SiC switch technology, using a 2400 V dc input and providing a three- phase output capability, generating an output fundamental frequency ranging between 1 to 3 kHz
- The design topology for this inverter is a three-level Active Neutral Point Clamped (ANPC) topology
- GE’s 1.7-kW, 500A, SiC metal oxide semiconductor field effect transistor (MOSFET) dual-switch power modules
- The dc filter sizing is based on DO‒160E, Section 21
Performance Goal
- 19kW/kg, 99% efficiency
Validation
- The project culminates in a ground demonstration
- Additional work will be need to validate high voltage operation at altitude
