General Electric Silicon Carbide Inverter

Overview

Topology

• GE inverter implements SiC switch technology, using a 2400 V dc input and providing a three- phase output capability, generating an output fundamental frequency ranging between 1 to 3 kHz
• The design topology for this inverter is a three-level Active Neutral Point Clamped (ANPC) topology
• GE’s 1.7-kW, 500A, SiC metal oxide semiconductor field effect transistor (MOSFET) dual-switch power modules
• The dc filter sizing is based on DO‒160E, Section 21

Performance Goal

• 19kW/kg, 99% efficiency

Validation

• The project culminates in a ground demonstration
• Additional work will be need to validate high voltage operation at altitude

Back to Electrified Aircraft Propulsion (EAP) for Larger Aircraft
Back to EAP home