Publications
Many of the technical publications of the NASA Glenn Smart Sensors and Electronics Systems Branch are listed below with links needed to view each work. These technical publications are posted on this site in order to ensure timely public dissemination of NASA technical work.
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| Title | Author(s) | Source | Year |
|---|---|---|---|
| DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C" | Mehta, Neudeck, Lawson | Materials Science Forum, vol. 1062, pp. 519-522 | 2022 |
| Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs | Neudeck, Spry, Krasowski, Chen | 2021 Compound Semiconductor Manufacturing Technology Conference (CS MANTCH) | 2021 |
| Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits | Neudeck, Spry, Krasowski, Chen, Greer, Chang, Lukco, Beheim, Prokop | Proceedings 2021 IMAPS High Temperature Electronics Conference, pp. 64-68 | 2021 |
| A 96% Alumina based Packaging System for 500°C Test of SiC Integrated Circuits | Chen, Neudeck, Spry, Beheim, Hunter | Proceedings 2021 IMAPS High Temperature Electronics Conference, pp. 69-75 | 2021 |
| Alternative Setup for Long-Duration Low-Duty-Cycle 600°C Ambient Testing of SiC Integrated Circuits | Izadnegahdar, Booth, Spry, Neudeck | Proceedings 2021 IMAPS High Temperature Electronics Conference, pp. 76-82 | 2021 |
| Practical SiC JFET-R Analog Integrated Circuit Design for Extreme Environment Applications | Krasowski, Neudeck | NASA Technical Memorandum TM 20210000735 | 2021 |
| Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI | Neudeck, Spry, Krasowski, Chen, Prokop, Greer, Chang | 2020 IEEE International Electron Devices Meeting (IEDM), pp. 27.2.1-4 | 2020 |
| Experimental Study of Structural Materials for Prolonged Venus Surface Exploration Missions | Lukco, Spry, Neudeck, Nakley, Phillips, Okojie, Hunter | AIAA Journal of Spacecraft and Rockets, vol. 57, no. 6, pp. 1118-1128 | 2020 |
| Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus) | Neudeck, Spry | Materials Science Forum, vol. 1004, pp. 1057-1065 ©Trans Tech Publications | 2020 |
| Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits | Neudeck, Spry, Chang | Materials Science Forum, vol. 1004, pp. 1148-1155 ©Trans Tech Publications | 2020 |
| Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology | Lauenstein, Neudeck, Ryder, Wilcox, Chen, Carts, Wrbanek, Wrbanek | IEEE Radiation Effects Data Workshop | 2019 |
| Demonstration of 4H-SiC JFET Digital ICs Across 1000 °C Temperature Range Without Change to Input Voltages | Neudeck, Spry, Krasowski, Prokop, Chen | Materials Science Forum, vol. 963, pp. 813-817 | 2019 |
| Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions | Neudeck, Chen, Meredith, Lukco, Spry, Nakley, Hunter | IEEE Journal of the Electron Devices Society, vol. 7, pp. 100-110 | 2018 |
| Yearlong 500 °C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits | Neudeck, Spry, Krasowski, Prokop, Beheim, Chen, Chang | Journal of Microelectronics and Electronic Packaging, vol. 15, no. 4, pp. 163-170 ©IMAPS | 2018 |
| Chemical Analysis of Materials Exposed to Venus Temperature and Surface Atmosphere | Lukco, Spry, Harvey, Costa, Okojie, Avishai, Nakley, Neudeck, Hunter | Earth and Space Science, vol. 5, pp. 270-284 | 2018 |
| Sixty Earth-days Test of Prototype Pt/HTCC Alumina Package in Simulated Venus Environment | Chen, Neudeck, Meredith, Lukco, Spry, Nakley, Phillips, Beheim, Hunter | Proceedings 2018 IMAPS High Temperature Electronics Conference, pp. 15-21 ©IMAPS | 2018 |
| Yearlong 500 °C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits | Neudeck, Spry, Krasowski, Prokop, Beheim, Chen, Chang | Proceedings 2018 IMAPS High Temperature Electronics Conference, pp. 71-78 ©IMAPS | 2018 |
| Prolonged 500 °C Operation of 100+ Transistor Silicon Carbide Integrated Circuits | Spry, Neudeck, Lukco, Chen, Krasowski, Prokop, Chang, Beheim | Materials Science Forum, vol. 924, pp. 949-952 ©Trans Tech Publications | 2018 |
| Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors | Neudeck | Materials Science Forum, vol. 924, pp. 962-966 ©Trans Tech Publications | 2018 |
| A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes | Jordan, Ponchak, Neudeck, Spry | 2018 IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet), pp. 23-26 | 2018 |
| Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C | Neudeck, Spry, Chen, Prokop, Krasowski | IEEE Electron Device Letters, vol. 38, no. 8, pp. 1082-1085 | 2017 |
| Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C | Neudeck, Spry, Chen, Lukco, Chang, Beheim | Materials Science Forum, vol. 897, pp. 567-570 ©Trans Tech Publications | 2017 |
| Prolonged Silicon Carbide Integrated Circuit Operation in Venus Surface Atmospheric Conditions | Neudeck, Meredith, Chen, Spry, Nakley, Hunter | AIP Advances, vol. 6, no. 12, p. 125119 | 2016 |
| Simultaneous Ohmic Contacts to p- and n-type 4H-SiC by Phase Segregation Annealing of Co-sputtered Pt-Ti | Okojie, Lukco | Journal of Applied Physics, vol. 120, p. 215301 ©American Institute of Physics | 2016 |
| First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated Circuits | Neudeck, Spry, Chen | Proceedings 2016 IMAPS High Temperature Electronics Conference, pp. 263-271 ©IMAPS | 2016 |
| Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect | Spry, Neudeck, Chen, Evans, Lukco, Chang, Beheim | Materials Science Forum, vol. 828, pp. 1112-1116 ©Trans Tech Publications | 2016 |
| Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C | Neudeck, Spry, Chen | Materials Science Forum, vol. 828, pp. 903-907 ©Trans Tech Publications | 2016 |
| Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits | Spry, Neudeck, Chen, Lukco, Chang, Beheim, Krasowski, Prokop | Proceedings 2016 IMAPS High Temperature Electronics Conference, pp. 249-256 ©IMAPS | 2016 |
| Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect | Spry, Neudeck, Chen, Lukco, Chang, Beheim, Krasowski, Prokop | Materials Science Forum, vol. 828, pp. 908-912 ©Trans Tech Publications | 2016 |
| Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect | Spry, Neudeck, Chen, Lukco, Chang, Beheim | IEEE Electron Device Letters, vol. 37, no.5, pp. 625-628 ©IEEE | 2016 |
| Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 °C | Spry, Neudeck, Chen, Lukco, Chang, Beheim | Proceedings of SPIE, vol. 9836, 98360N, ©SPIE | 2016 |
| Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package | Chen, Neudeck, Spry, Beheim, Hunter | Proceedings 2016 IMAPS High Temperature Electronics Conference, pp. 66-72 ©IMAPS | 2016 |
| Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC | Kragh-Buetow, Okojie, Lukco, and Mohney | Semiconductor Science and Technology, nol. 30, no. 10, p. 105019 © IOP Science | 2015 |
| 4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery | Okojie, Lukco, Nguyen, Savrun | IEEE Electron Device Letters, vol. 36, no. 2, p. 174-176 ©IEEE | 2015 |
| Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design | Neudeck, Chen, Spry, Beheim, Chang | Materials Science Forum, vol. 821-823, pp. 781-784 ©Trans Tech Publications | 2015 |
| 4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K | Spry, Neudeck, Chen, Chang, Lukco, Beheim | Electrochemical Society Transactions, vol. 69, no. 11, pp. 113-121 ©Electrochemical Society | 2015 |
| Demonstration of SiC Pressure Sensors at 750 °C | Okojie, Lukco, Nguyen, Savrun | Proceedings 2014 IMAPS International High Temperature Electronics Conference, pp. 28-32 © IMAPS | 2014 |
| High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors | Okojie, Meredith, Chang, Savrun | Proceedings 2014 IMAPS International High Temperature Electronics Conference, pp. 47-52 © IMAPS | 2014 |
| SiC growth by Solvent-Laser Heated Floating Zone | Woodworth, Neudeck, Sayir, Spry, Trunek, Powell | Materials Science Forum, vol. 717-720, pp. 49-52 ©Trans Tech Publications | 2012 |
| Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy | Trunek, Neudeck, Woodworth, Powell, Spry, Raghothamachar, Dudley | Materials Science Forum, vol. 717-720, pp. 33-36 ©Trans Tech Publications | 2012 |
| A New Method to Grow SiC: Solvent-Laser Heated Floating Zone | Woodworth, Neudeck, Sayir | 6th International Symposium on Advanced Science and Technology of Silicon Materials | 2012 |
| Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide | Evans, Okojie, Lukco | Materials Science Forum, vol. 717-720, pp. 841-844 ©Trans Tech Publications | 2012 |
| High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator | Meredith, Neudeck, Ponchak, Beheim, Scardeletti, Jordan, Chen, Spry, Krasowski, Hunter | Materials Science Forum, vol. 717-720, pp. 1215-1218 ©Trans Tech Publications | 2012 |
| Supressing Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors | Okojie, Lukco, Nguyen, Savrun | Proceedings 2012 IMAPS International High Temperature Electronics Conference pp. 99-103 ©IMAPS | 2012 |
| Iridium Interfacial Stack - IrIS | Spry | NASA Tech Briefs, May 2012 | 2012 |
| Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station | Neudeck, Prokop, Greer, Chen, Krasowski | Materials Science Forum, vol. 679-680, pp. 579-582 | 2011 |
| Assessment of Durable SiC JFET Technology for +600 °C to -125 °C Integrated Circuit Operation | Neudeck, Krasowski, Prokop | Electrochemical Society Transactions, vol. 41, no. 8, pp. 163-176 ©Electrochemical Society | 2011 |
| Improved Reliability of SiC Pressure Sensors for Long Term High Temperature Applications | Okojie, Nguyen, Savrun, Lukco | 16th International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS 2011), pp. 2875-2878 ©IEEE | 2011 |
| Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters | Krasowski | NASA Tech Briefs, April 2011 | 2011 |
| Zero offset drift suppression in SiC pressure sensors at 600 °C | Okojie, Blaha, Lukco, Nguyen, Savrun | Proceedings IEEE Sensors 2010 ©IEEE | 2010 |
| A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 °C | Okojie, Evans, Lukco, Morris | IEEE Electron Device Letters, vol. 31, pp. 791-793 ©IEEE | 2010 |
| Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 °C to +500 °C | Neudeck, Chen, Krasowski, Prokop | Materials Science Forum, vol. 645-648, pp. 1135-1138 ©Trans Tech Publications | 2010 |
| HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces | Trunek, Powell, Neudeck, Mrdenovich | Materials Science Forum, vol. 615-617 pp. 593-596 @Trans Tech Publications | 2009 |
| Observations of Screw Dislocation Driven Growth and Faceting During CVD Homoepitaxy on 4H-SiC On-Axis Mesa Arrays | Neudeck, Trunek, Powell, Picard, Twigg, Mrdenovich | 13th International Conference on Defects - Recognition, Imaging, and Physics in Semiconductors (DRIP-XIII) | 2009 |
| Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry | Neudeck, Spry, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans, Krasowski, Prokop | Materials Science Forum, vol. 615-617, pp. 929-932 ©Trans Tech Publications | 2009 |
| Extreme Temperature 6H-SiC JFET Integrated Circuit Technology | Neudeck, Garverick, Spry, Chen, Beheim, Krasowski, Mehregany | Physica Status Solidi A, vol. 206, pp. 2329-2345 ©Wiley-VCH | 2009 |
| Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient | Spry, Neudeck, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans | Materials Science Forum, vol. 600-603, pp. 1079-1082 ©Trans Tech Publications | 2008 |
| Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C | Neudeck, Spry, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans, Krasowski, Prokop | IEEE Electron Device Letters, vol. 29, pp. 456-459 ©IEEE | 2008 |
| Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C | Neudeck, Spry, Chen, Chang, Beheim, Okojie, Evans, Meredith, Ferrier, Krasowski, Prokop | Materials Research Society Symposium Proceedings, vol. 1069, pp. 209-214 ©Materials Research Society | 2008 |
| 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 °C | Neudeck, Spry, Chen, Chang, Beheim, Okojie, Evans, Meredith, Ferrier, Krasowski, Prokop | IMAPS International High Temperature Electronics Conference, pp. 95-102 ©IMAPS | 2008 |
| Current-Voltage Testing of Candidate Dielectric Materials for 500 °C SiC Integrated Circuits | Chang, Neudeck, Beheim, Spry | IMAPS International High Temperature Electronics Conference, pp. 84-90 ©IMAPS | 2008 |
| Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers | Neudeck, Spry, Trunek, Evans, Chen, Hunter, Androjna | Materials Science Forum, vol. 600-603, pp. 1199-1202 ©Trans Tech Publications | 2008 |
| Logic Gates Made of N-Channel JFETs and Epitaxial Resistors | Krasowski | NASA Tech Briefs, December 2008 | 2008 |
| SiC JFET Transistor Circuit Model for Extreme Temperature Range | Neudeck | NASA Tech Briefs, December 2008 | 2008 |
| Growth and Characterization of 3C-SiC and 2H-AlN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates | Neudeck, Du, Skowronski, Spry, Trunek | Journal of Physics D: Applied Physics, vol. 40, pp. 6139-6149 ©IOP Publishing | 2007 |
| Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers | Trunek, Neudeck, Spry | Materials Science Forum, vol. 556-557, pp. 117-120 ©Trans Tech Publications | 2007 |
| SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C | Neudeck, Spry, Chen, Okojie, Beheim, Meredith, Ferrier | Materials Science Forum, vol. 556-557, pp. 831-834 ©Trans Tech Publications | 2007 |
| SiC Technology (2nd Edition) | Neudeck | The VLSI Handbook, Second Edition, CRC Press | 2007 |
| Process-Induced Deformations and Stacking Faults in 4H-SiC | Okojie, Huang, Dudley, Zhang, P. Pirouz | Materials Research Society Symposium Proceedings, vol. 911, pp. 145-150 ©Materials Research Society | 2006 |
| Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers | Trunek, Neudeck, Spry | Materials Science Forum, vol. 527-529, pp. 247-250 ©Trans Tech Publications | 2006 |
| Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas | Neudeck, Trunek, Spry, Powell, Du, Skowronski, Bassim, Mastro, Twigg, Holm, Henry, Eddy | Materials Research Society Symposium Proceedings, vol. 911, pp. 85-94 ©Materials Research Society | 2006 |
| CVD Growth of 3C-SiC on 4H/6H Mesas | Neudeck, Trunek, Spry, Powell, Du, Skowronski, Huang, Dudley | Chemical Vapor Deposition, vol. 12, pp. 531-540 ©Wiley-VCH | 2006 |
| Deep Reactive Ion Etching (DRIE) of High Aspect Ration SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process | Evans, Beheim | Materials Science Forum, vol. 527-529, pp. 1115-1118 | 2006 |
| Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC | Beheim, Evans | Materials Research Society Symposium Proceedings, vol. 911, pp. 329-334 | 2006 |
| Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC | Neudeck, Spry, Trunek | Materials Science Forum, vol. 527-529, pp. 1335-1338 ©Trans Tech Publications | 2006 |
| Demonstration of 500 °C AC Amplifier Based on SiC MESFET and Ceramic Packaging | Chen, Spry, Neudeck | IMAPS International High Temperature Electronics Conference, pp. 240-246 ©IMAPS | 2006 |
| Performance of MEMS-DCA SiC Pressure Transducers under Various Dynamic Conditions | Okojie, Page, Wolff | IMAPS International High Temperature Electronics Conference, pp. 70-75 ©IMAPS | 2006 |
| Performance of MEMS-DCA SiC Pressure Transducers under Various Dynamic Conditions | Okojie, Nguyen, Nguyen, Savrun, Lukco, Buehler, McCue, Knudsen | IMAPS International High Temperature Electronics Conference, pp. 82-86 ©IMAPS | 2006 |
| Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas | Powell, Neudeck, Trunek, Abel | Materials Science Forum, vol. 483-485, pp. 753-756 ©Trans Tech Publications | 2005 |
| Improved Method of Manufacturing SiC Devices | Okojie | NASA Tech Briefs, June 2005 | 2005 |
| Inelastic Stress Relaxation in Single Crystal SiC Substrates | Okojie | Materials Science Forum, vol. 457-460, pp. 375-378 | 2004 |
| Residual Stresses and Stacking Faults in N-Type 4H-SiC Epilayers | Okojie, Zhang, Pirouz | Materials Science Forum, vol. 457-460, pp. 529-532 ©Trans Tech Publications | 2004 |
| Thermoplastic Deformation and Residual Stress Topography of 4H-SiC Wafers | Okojie, Zhang | Materials Research Society Symposium Proceedings, vol. 815, pp. 133-138 ©Materials Research Society | 2004 |
| Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa Surfaces | Neudeck, Trunek, Powell | Materials Research Society Symposium Proceedings, vol. 815, pp. 59-64 ©Materials Research Society | 2004 |
| Comparative Growth Behavior of 3C-SiC Mesa Heterofilms With and Without Extended Defects | Trunek, Neudeck, Spry | Materials Science Forum, vol. 457-460, pp. 261-264 ©Trans Tech Publications | 2004 |
| Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers | Neudeck, Powell, Trunek, Spry | Materials Science Forum, vol. 457-460, pp. 169-174 ©Trans Tech Publications | 2004 |
| High Breakdown Field P-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas | Spry, Trunek, Neudeck | Materials Science Forum, vol. 457-460, pp. 1061-1064 ©Trans Tech Publications | 2004 |
| Electrical Operation of 6H-SiC MESFET at 500 °C for 500 Hours in Air Ambient | Spry, Neudeck, Okojie, Chen, Beheim, Meredith, Mueller, Ferrier | IMAPS International High Temperature Electronics Conference ©IMAPS | 2004 |
| Development of SiC-Based Gas Sensors for Aerospace Applications | Hunter, Neudeck, Xu, Lucko, Trunek, Artale, Lampard, Androjna, Makel, Ward, Liu | Materials Research Society Symposium Proceedings, vol. 815, pp. 287-297 ©Materials Research Society | 2004 |
| Accelerated Stress Testing of SiC MEMS-DCA Pressure Transducers | Savrun, Nguyen, Okojie, Blaha | IMAPS International High Temperature Electronics Conference ©IMAPS | 2004 |
| Reliability Evaluation of Direct Chip Attached Silicon Carbide Pressure Transducers | Okojie, Savrun, Nguyen, Nguyen, Blaha | 3rd International Conference on Sensors | 2004 |
| SiC-Based Miniature High-Temperature Cantilever Anemometer | Okojie, Fralick, Saad | NASA Tech Briefs, July 2004 | 2004 |
| Reproducible Growth of High-Quality Cubic-SiC Layers | Neudeck, Powell | NASA Tech Briefs, February 2004 | 2004 |
| X-ray Diffraction Measurement of Doping Induced Lattice Mismatch in N-Type 4H-SiC Epilayers Grown on P-Type Substrates | Okojie, Holzheu, Huang, Michael Dudley | Applied Physics Letters, vol. 83, no. 10, pp. 1971-1973 ©American Institute of Physics | 2003 |
| Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas | Neudeck, Powell | Silicon Carbide: Recent Major Advances, Springer-Verlag | 2003 |
| Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth | Neudeck, Spry, Trunek, Powell, Beheim | Materials Research Society Symposium Proceedings, vol. 742, pp. K5.2.1-K5.2.6 ©Materials Research Society | 2003 |
| Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy | Neudeck, Powell, Spry, Trunek, Huang, Vetter, Dudley, Skowronski, Liu | Materials Science Forum, vol. 433-436, pp. 213-216 ©Trans Tech Publications | 2003 |
| Intermodulation Distortion Performance of Silicon Carbide Schottky Barrier RF Mixer Diodes | Simons, Neudeck | IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 2, pp. 669-672 | 2003 |
| A Single Crystal SiC Plug-and-Play High Temperature Drag Force Transducer | Okojie, Fralick, Saad, Blaha, Adamczyk, Feiereisen | The 12th International Conference on Solid State Sensors, Actuators and Microsystems, pp. 400-403 (IEEE # 03TH8664C) ©IEEE | 2003 |
| 4H- to 3C-SiC Polytypic Transformation During Oxidation | Okojie, Brillson, Tumakha, Jenseen, Xhang, Pirouz | Materials Science Forum, vol. 389-393,pp. 451-454 ©Trans Tech Publications | 2002 |
| Surface Morphology and Chemistry of 4H- and 6H-SiC After Cyclic Oxidation | Okojie, Lukco, Keys | Materials Science Forum, vol. 389-393,pp. 1101-1104 ©Trans Tech Publications | 2002 |
| Homoepitaxial "Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy | Neudeck, Powell, A. Trunek, Huang, Dudley | Materials Science Forum, vol. 389-393,pp. 311-314 ©Trans Tech Publications | 2002 |
| Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web Growth of Thin SiC Cantilevers | Neudeck, Powell, Beheim, Benavage, Abel, Trunek, Spry, Dudley, Vetter | Journal of Applied Physics, vol. 92, no. 5, pp. 2391-2400 ©American Institute of Physics | 2002 |
| Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces | Neudeck, Powell, Trunek, Spry, Beheim, Benavage, Abel, Vetter, Dudley | Materials Science Forum, vol. 389-393, pp. 251-254 ©Trans Tech Publications | 2002 |
| Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC | Tumakha, Brillson, Jessen, Okojie, Lukco, Zhang, Pirouz | Journal of Vacuum Science & Technology B, vol. 20, no. 2, pp. 554-560 ©American Vacuum Society | 2002 |
| Reliability Assessment of Ti/TaSi2/Pt Ohmic Contacts on SiC After 1000 h at 600 °C | Okojie, Lukco, Chen, Spry | Journal of Applied Physics, vol. 91, no. 10, pp. 6553-9559 ©American Institute of Physics | 2002 |
| High-Temperature Electronics - A Role for Wide Bandgap Semiconductors? | Neudeck, Okojie, Chen | Proceedings of the IEEE, vol. 90, no. 6, pp. 1065-1076 ©IEEE | 2002 |
| Design Considerations for Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometers | Okojie, Atwell, Kornegay, Roberson, Beliveau | Technical Digest of the 15th IEEE International Conference on MEMS, p. 618-622 (IEEE # 02CH37266) ©IEEE | 2002 |
| Observation of Oxidation-Induced 4H-SiC-3C-SiC Polytypic Transformation | Okojie, Brillson, Tumakha, Jenseen, Xhang, Pirouz | Applied Physics Letters, vol. 79, no. 19, pp. 3056-3058 ©American Institute of Physics | 2001 |
| Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC | Okojie, Lukco, Chen, Spry, C. Salupo | Materials Research Society Symposia Proceedings, vol. 640 ©Materials Research Society | 2001 |
| Silicon Carbide Electronic Devices | Neudeck | Encyclopedia of Materials: Science and Technology, Elsevier Science, vol. 9, pp. 8508-8519 | 2001 |
| Characteristics of Hermetic 6H-SiC Pressure Sensor at 600 C | Okojie, Beheim, Saad, Savrun | AIAA Space 2001 Conference and Exposition, AIAA Paper No. 2001-4652 | 2001 |
| Growth of Step-Free Surfaces on Device-Size (0001)SiC Mesas | Powell, Neudeck, Trunek, Beheim,Matus, Hoffmann, Keys | Applied Physics Letters, vol. 77, no. 10, pp. 1449-1451 ©American Institute of Physics | 2000 |
| Stable Ti/TaSi2/Pt Ohmic Contacts on N-Type 6H-SiC Epilayer at 600C in Air | Okojie, Spry, Krotine, Salupo, Wheeler | Materials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society | 2000 |
| Deep RIE Process for Silicon Carbide Power Electronics and MEMS | Beheim, Salupo | Materials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society | 2000 |
| 600 C Logic Gates Using Silicon Carbide JFET's | Neudeck, Beheim, Salupo | Government Microcircuit Applications Conference Technical Digest, pp. 421-424 | 2000 |
| Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices | Neudeck | Materials Science Forum, vol. 338-342, pp. 1161-1166 | 2000 |
| Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes | Schnabel, Tabib-Azar, Neudeck, Bailey, Su, Dudley, Raffaelle | Materials Science Forum, vol. 338-342, pp. pp. 489-492 ©Trans Tech Publications | 2000 |
| Investigations of Non-Micropipe X-ray Imaged Crystal Defects in SiC Devices | Neudeck, Kuczmarski, Dudley, Vetter, Su, Keys, Trunek | Materials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society | 2000 |
| SiC Technology | Neudeck | The VLSI Handbook, CRC Press and IEEE Press, 2000, pp. 6.1-6.24 | 2000 |
| Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties | Neudeck, Huang, Dudley | IEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 478-484 ©IEEE | 1999 |
| Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 2: Dynamic Pulse-Breakdown Properties | Neudeck, Fazi | IEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 485-492 | 1999 |
| Gaseous Etching for the Characterization of Structural Defects in Silicon Carbide Single Crystals | Powell, Larkin, Trunek | Materials Science Forum, vol. 264-268, pp. 421-424 ©Trans Tech Publications | 1998 |
| Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties | Neudeck, Fazi | Materials Science Forum, vol. 264-268, pp. 1037-1040 | 1998 |
| Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis | Neudeck | Journal of Electronic Materials, vol. 27, no. 4, pp. 317-323 | 1998 |
| Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction Rectifiers | Neudeck, Huang, Dudley | Materials Research Society Symposia Proceedings, vol. 483, pp. 285-294 ©Materials Research Society | 1998 |
| Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications | Neudeck, Huang, Dudley, Fazi, | Materials Research Society Symposia Proceedings, vol. 512, pp. 107-112 ©Materials Research Society | 1998 |
| Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction Rectifiers | Neudeck, Huang, Dudley | Solid-State Electronics, vol. 42, no. 12, pp. 2157-2164 ©Elsevier Science Ltd. | 1998 |
| Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide | Powell, Larkin | Physica Status Solid B, vol. 202, no. 1, pp. 529-548 | 1997 |
| SiC Dopant Incorporation Control Using Site-Competition CVD | Larkin | Physica Status Solid B, vol. 202, no. 1, pp. 305-320 | 1997 |
| Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers | Neudeck, Fazi | IEEE Electron Device Lett., vol. 18, no. 3, pp. 96-98 | 1997 |
| Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors | Fazi, Neudeck | IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 49-51 | 1997 |
| Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD SiC Epilayers | Larkin | Institute of Physics Conference Series, no. 142, pp. 23-28 | 1996 |
| Dopant Incorporation Efficiency in CVD Silicon Carbide Epilayers | Larkin | Materials Research Society Symposia Proceedings, vol. 410, pp. 337-344 | 1996 |
| Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001)SiC Substrates | Powell, Larkin, Abel, Zhou, Pirouz | Institute of Physics Conference Series, no. 142, pp. 77-80 | 1996 |
| Sources of Morphological Defects in SiC Epilayers | Powell, Larkin, Zhou, Pirouz | Transactions Third International High Temperature Electronics Conference,pp. II-3 - II - 8 | 1996 |
| Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes | Neudeck, Fazi, Parsons | Transactions Third International High Temperature Electronics Conference, pp. XVI-15 - XVI-20 | 1996 |
| Progress Towards High Temperature, High Power SiC Devices | Neudeck | Institute of Physics Conference Series, no. 141, pp. 1-6 | 1995 |
| Performance Limiting Micropipe Defects in Silicon Carbide Wafers | Neudeck, Powell | IEEE Electron Device Letters, vol. 15, no. 2, pp. 63-65 | 1994 |
| Investigation of Defects in Epitaxial 3C-SiC, 4H-SiC and 6H-SiC Films Grown on SiC Substrates | Powell, Larkin, Neudeck, Yang, Pirouz | Institute of Physics Conference Series, no. 137, pp. 161-164 | 1994 |
| Site-Competition Epitaxy for Controlled Doping of CVD Silicon Carbide | Larkin, Neudeck, Powell, Matus | Institute of Physics Conference Series, no. 137, pp. 51-54 | 1994 |
| Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient Techniques | Neudeck, Kang, Petit, Tabib-Azar | Journal of Applied Physics, vol. 75, no. 12, pp. 7949-7953 ©American Institute of Physics | 1994 |
| 2000 V 6H-SiC PN Junction Diodes | Neudeck, Larkin, Powell, Matus, Salupo | Institute of Physics Conference Series, no. 137, pp. 475-479 | 1994 |
| 2000 V 6H‐SiC p‐n Junction Diodes Grown by Chemical Vapor Deposition | Neudeck, Larkin, Powell, Matus, Salupo | Applied Physics Letters, vol. 64, no. 11, pp. 1386-1388 ©American Institute of Physics | 1994 |
| Electrical Properties of Epitaxial 3C- and 6H-SiC p-n Junction Diodes Produced Side-by-Side on 6H-SiC Wafers | Neudeck, Larkin, Starr, Powell, Salupo, Matus | IEEE Transactions on Electron Devices, vol. 41, no. 5, pp. 826-835 ©IEEE | 1994 |
| Silicon Carbide Buried-Gate Junction Field Effect Transistors for High-Temperature Power Electronic Applications | Neudeck, Petit, Salupo | Transactions Second International High Temperature Electronic Conference, pp. X-23 - X-28 | 1994 |
| Greatly Improved 3C-SiC p-n Junction Diodes Grown by Chemical Vapor Deposition | Neudeck, Larkin, Starr, Powell, Salupo, Matus | IEEE Electron Device Letters, vol. 14, no.3, pp. 136-138 ©IEEE | 1993 |
| High Voltage 6H-SiC Rectifiers: Prospects and Progress | Neudeck, Larkin, Powell, Matus | IEEE 51st Annual Device Research Conference | 1993 |
| Electrical Characterization of 3C- and 6H-SiC PN Junction Diodes Grown by CVD on Low-Tilt-Angle 6H-SiC Wafers | Neudeck, Larkin, Starr, Powell, Salupo, Matus | Workshop on SiC Materials and Devices, Charlottesville, Virginia USA | 1992 |
| Four-Fold Improvement of 3C-SiC PN Junction Diode Blocking Voltage Obtained Through Improved CVD Epitaxy on Low-Tilt-Angle 6H-SiC Wafers | Neudeck, Larkin, Starr, Powell, Salupo, Matus | IEEE International Electron Devices Meeting Technical Diggest, pp. 1003-1005 ©IEEE | 1992 |
| Growth of Improved Qualtiy 3C-SiC Films on 6H-SiC Substrates | Powell, Larkin, Matus, Choyke, Bradshaw, Henderson, Yoganathan, Yang, Pirouz | Applied Physics Letters, vol. 56, no. 14, pp. 1353-1355 ©American Institute of Physics | 1990 |
| Growth of High Quality 6H-SiC Epitaxial Films on Vicinal (0001) 6H-SiC Wafers | Powell, Larkin, Matus, Choyke, Bradshaw, Henderson, Yoganathan, Yang, Pirouz | Applied Physics Letters, vol. 56, no. 15, pp. 1442-1444 ©American Institute of Physics | 1990 |