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Publications

Many of the technical publications of the NASA Glenn Smart Sensors and Electronics Systems Branch are listed below with links needed to view each work. These technical publications are posted on this site in order to ensure timely public dissemination of NASA technical work.

Works listed below that are subject to US copyright are denoted by the © copyright symbol in the Reference column. All persons accessing this information are expected to adhere to the terms and constraints invoked by each work’s copyright. Copyrighted works may not be reposted elsewhere without the explicit permission of the copyright holder.

Works authored solely by US Government Employees performing official duties are not protected by US copyright. However, co-authored work with at least one non-US Government co-author is subject to copyright. Copyright and all rights therein are retained by authors or by other copyright holders. Please note that due to recent alteration of NASA Glenn Research and Engineering Directorate information posting policy, some publications listed in the below table are no longer available for direct viewing by clicking on the publication’s title.

TitleAuthor(s)SourceYear
Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICsNeudeck, Spry, Krasowski, Chen2021 Compound Semiconductor Manufacturing Technology Conference (CS MANTCH)2021
Upscaling of 500 °C Durable SiC JFET-R Integrated CircuitsNeudeck, Spry, Krasowski, Chen, Greer, Chang, Lukco, Beheim, ProkopProceedings 2021 IMAPS High Temperature Electronics Conference, pp. 64-682021
A 96% Alumina based Packaging System for 500°C Test of SiC Integrated CircuitsChen, Neudeck, Spry, Beheim, HunterProceedings 2021 IMAPS High Temperature Electronics Conference, pp. 69-752021
Alternative Setup for Long-Duration Low-Duty-Cycle 600°C Ambient Testing of SiC Integrated CircuitsIzadnegahdar, Booth, Spry, NeudeckProceedings 2021 IMAPS High Temperature Electronics Conference, pp. 76-822021
Practical SiC JFET-R Analog Integrated Circuit Design for Extreme Environment ApplicationsKrasowski, NeudeckNASA Technical Memorandum TM 202100007352021
Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSINeudeck, Spry, Krasowski, Chen, Prokop, Greer, Chang2020 IEEE International Electron Devices Meeting (IEDM), pp. 27.2.1-42020
Experimental Study of Structural Materials for Prolonged Venus Surface Exploration MissionsLukco, Spry, Neudeck, Nakley, Phillips, Okojie, HunterAIAA Journal of Spacecraft and Rockets, vol. 57, no. 6, pp. 1118-11282020
Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)Neudeck, SpryMaterials Science Forum, vol. 1004, pp. 1057-1065 ©Trans Tech Publications2020
Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated CircuitsNeudeck, Spry, ChangMaterials Science Forum, vol. 1004, pp. 1148-1155 ©Trans Tech Publications2020
Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit TechnologyLauenstein, Neudeck, Ryder, Wilcox, Chen, Carts, Wrbanek, WrbanekIEEE Radiation Effects Data Workshop2019
Demonstration of 4H-SiC JFET Digital ICs Across 1000 °C Temperature Range Without Change to Input VoltagesNeudeck, Spry, Krasowski, Prokop, ChenMaterials Science Forum, vol. 963, pp. 813-8172019
Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric ConditionsNeudeck, Chen, Meredith, Lukco, Spry, Nakley, HunterIEEE Journal of the Electron Devices Society, vol. 7, pp. 100-1102018
Yearlong 500 °C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated CircuitsNeudeck, Spry, Krasowski, Prokop, Beheim, Chen, ChangJournal of Microelectronics and Electronic Packaging, vol. 15, no. 4, pp. 163-170 ©IMAPS2018
Chemical Analysis of Materials Exposed to Venus Temperature and Surface AtmosphereLukco, Spry, Harvey, Costa, Okojie, Avishai, Nakley, Neudeck, HunterEarth and Space Science, vol. 5, pp. 270-2842018
Sixty Earth-days Test of Prototype Pt/HTCC Alumina Package in Simulated Venus EnvironmentChen, Neudeck, Meredith, Lukco, Spry, Nakley, Phillips, Beheim, HunterProceedings 2018 IMAPS High Temperature Electronics Conference, pp. 15-21 ©IMAPS2018
Yearlong 500 °C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated CircuitsNeudeck, Spry, Krasowski, Prokop, Beheim, Chen, ChangProceedings 2018 IMAPS High Temperature Electronics Conference, pp. 71-78 ©IMAPS2018
Prolonged 500 °C Operation of 100+ Transistor Silicon Carbide Integrated CircuitsSpry, Neudeck, Lukco, Chen, Krasowski, Prokop, Chang, BeheimMaterials Science Forum, vol. 924, pp. 949-952 ©Trans Tech Publications2018
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit ResistorsNeudeckMaterials Science Forum, vol. 924, pp. 962-966 ©Trans Tech Publications2018
A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky DiodesJordan, Ponchak, Neudeck, Spry2018 IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet), pp. 23-262018
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °CNeudeck, Spry, Chen, Prokop, KrasowskiIEEE Electron Device Letters, vol. 38, no. 8, pp. 1082-10852017
Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °CNeudeck, Spry, Chen, Lukco, Chang, BeheimMaterials Science Forum, vol. 897, pp. 567-570 ©Trans Tech Publications2017
Prolonged Silicon Carbide Integrated Circuit Operation in Venus Surface Atmospheric ConditionsNeudeck, Meredith, Chen, Spry, Nakley, HunterAIP Advances, vol. 6, no. 12, p. 1251192016
Simultaneous Ohmic Contacts to p- and n-type 4H-SiC by Phase Segregation Annealing of Co-sputtered Pt-TiOkojie, LukcoJournal of Applied Physics, vol. 120, p. 215301 ©American Institute of Physics2016
First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated CircuitsNeudeck, Spry, ChenProceedings 2016 IMAPS High Temperature Electronics Conference, pp. 263-271 ©IMAPS2016
Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal InterconnectSpry, Neudeck, Chen, Evans, Lukco, Chang, BeheimMaterials Science Forum, vol. 828, pp. 1112-1116 ©Trans Tech Publications2016
Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °CNeudeck, Spry, ChenMaterials Science Forum, vol. 828, pp. 903-907 ©Trans Tech Publications2016
Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated CircuitsSpry, Neudeck, Chen, Lukco, Chang, Beheim, Krasowski, ProkopProceedings 2016 IMAPS High Temperature Electronics Conference, pp. 249-256 ©IMAPS2016
Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal InterconnectSpry, Neudeck, Chen, Lukco, Chang, Beheim, Krasowski, ProkopMaterials Science Forum, vol. 828, pp. 908-912 ©Trans Tech Publications2016
Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level InterconnectSpry, Neudeck, Chen, Lukco, Chang, BeheimIEEE Electron Device Letters, vol. 37, no.5, pp. 625-628 ©IEEE2016
Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 °CSpry, Neudeck, Chen, Lukco, Chang, BeheimProceedings of SPIE, vol. 9836, 98360N, ©SPIE2016
Electrical Performance of a High Temperature 32-I/O HTCC Alumina PackageChen, Neudeck, Spry, Beheim, HunterProceedings 2016 IMAPS High Temperature Electronics Conference, pp. 66-72 ©IMAPS2016
Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiCKragh-Buetow, Okojie, Lukco, and MohneySemiconductor Science and Technology, nol. 30, no. 10, p. 105019 © IOP Science2015
4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity RecoveryOkojie, Lukco, Nguyen, SavrunIEEE Electron Device Letters, vol. 36, no. 2, p. 174-176 ©IEEE2015
Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC DesignNeudeck, Chen, Spry, Beheim, ChangMaterials Science Forum, vol. 821-823, pp. 781-784 ©Trans Tech Publications2015
4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 KSpry, Neudeck, Chen, Chang, Lukco, BeheimElectrochemical Society Transactions, vol. 69, no. 11, pp. 113-121 ©Electrochemical Society2015
Demonstration of SiC Pressure Sensors at 750 °COkojie, Lukco, Nguyen, SavrunProceedings 2014 IMAPS International High Temperature Electronics Conference, pp. 28-32 © IMAPS2014
High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure SensorsOkojie, Meredith, Chang, SavrunProceedings 2014 IMAPS International High Temperature Electronics Conference, pp. 47-52 © IMAPS2014
SiC growth by Solvent-Laser Heated Floating ZoneWoodworth, Neudeck, Sayir, Spry, Trunek, PowellMaterials Science Forum, vol. 717-720, pp. 49-52 ©Trans Tech Publications2012
Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD EpitaxyTrunek, Neudeck, Woodworth, Powell, Spry, Raghothamachar, DudleyMaterials Science Forum, vol. 717-720, pp. 33-36 ©Trans Tech Publications2012
A New Method to Grow SiC: Solvent-Laser Heated Floating ZoneWoodworth, Neudeck, Sayir6th International Symposium on Advanced Science and Technology of Silicon Materials2012
Development of an Extreme High Temperature n-type Ohmic Contact to Silicon CarbideEvans, Okojie, LukcoMaterials Science Forum, vol. 717-720, pp. 841-844 ©Trans Tech Publications2012
High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring OscillatorMeredith, Neudeck, Ponchak, Beheim, Scardeletti, Jordan, Chen, Spry, Krasowski, HunterMaterials Science Forum, vol. 717-720, pp. 1215-1218 ©Trans Tech Publications2012
Supressing Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure SensorsOkojie, Lukco, Nguyen, SavrunProceedings 2012 IMAPS International High Temperature Electronics Conference pp. 99-103 ©IMAPS2012
Iridium Interfacial Stack - IrISSpryNASA Tech Briefs, May 20122012
Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space StationNeudeck, Prokop, Greer, Chen, KrasowskiMaterials Science Forum, vol. 679-680, pp. 579-5822011
Assessment of Durable SiC JFET Technology for +600 °C to -125 °C Integrated Circuit OperationNeudeck, Krasowski, ProkopElectrochemical Society Transactions, vol. 41, no. 8, pp. 163-176 ©Electrochemical Society2011
Improved Reliability of SiC Pressure Sensors for Long Term High Temperature ApplicationsOkojie, Nguyen, Savrun, Lukco16th International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS 2011), pp. 2875-2878 ©IEEE2011
Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level ShiftersKrasowskiNASA Tech Briefs, April 20112011
Zero offset drift suppression in SiC pressure sensors at 600 °COkojie, Blaha, Lukco, Nguyen, SavrunProceedings IEEE Sensors 2010 ©IEEE2010
A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 °COkojie, Evans, Lukco, MorrisIEEE Electron Device Letters, vol. 31, pp. 791-793 ©IEEE2010
Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 °C to +500 °CNeudeck, Chen, Krasowski, ProkopMaterials Science Forum, vol. 645-648, pp. 1135-1138 ©Trans Tech Publications2010
HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC SurfacesTrunek, Powell, Neudeck, MrdenovichMaterials Science Forum, vol. 615-617 pp. 593-596 @Trans Tech Publications2009
Observations of Screw Dislocation Driven Growth and Faceting During CVD Homoepitaxy on 4H-SiC On-Axis Mesa ArraysNeudeck, Trunek, Powell, Picard, Twigg, Mrdenovich13th International Conference on Defects - Recognition, Imaging, and Physics in Semiconductors (DRIP-XIII)2009
Prolonged 500 °C Operation of 6H-SiC JFET Integrated CircuitryNeudeck, Spry, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans, Krasowski, ProkopMaterials Science Forum, vol. 615-617, pp. 929-932 ©Trans Tech Publications2009
Extreme Temperature 6H-SiC JFET Integrated Circuit TechnologyNeudeck, Garverick, Spry, Chen, Beheim, Krasowski, MehreganyPhysica Status Solidi A, vol. 206, pp. 2329-2345 ©Wiley-VCH2009
Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air AmbientSpry, Neudeck, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, EvansMaterials Science Forum, vol. 600-603, pp. 1079-1082 ©Trans Tech Publications2008
Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °CNeudeck, Spry, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans, Krasowski, ProkopIEEE Electron Device Letters, vol. 29, pp. 456-459 ©IEEE2008
Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °CNeudeck, Spry, Chen, Chang, Beheim, Okojie, Evans, Meredith, Ferrier, Krasowski, ProkopMaterials Research Society Symposium Proceedings, vol. 1069, pp. 209-214 ©Materials Research Society2008
6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 °CNeudeck, Spry, Chen, Chang, Beheim, Okojie, Evans, Meredith, Ferrier, Krasowski, ProkopIMAPS International High Temperature Electronics Conference, pp. 95-102 ©IMAPS2008
Current-Voltage Testing of Candidate Dielectric Materials for 500 °C SiC Integrated CircuitsChang, Neudeck, Beheim, SpryIMAPS International High Temperature Electronics Conference, pp. 84-90 ©IMAPS2008
Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed CantileversNeudeck, Spry, Trunek, Evans, Chen, Hunter, AndrojnaMaterials Science Forum, vol. 600-603, pp. 1199-1202 ©Trans Tech Publications2008
Logic Gates Made of N-Channel JFETs and Epitaxial ResistorsKrasowskiNASA Tech Briefs, December 20082008
SiC JFET Transistor Circuit Model for Extreme Temperature RangeNeudeckNASA Tech Briefs, December 20082008
Growth and Characterization of 3C-SiC and 2H-AlN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa SubstratesNeudeck, Du, Skowronski, Spry, TrunekJournal of Physics D: Applied Physics, vol. 40, pp. 6139-6149 ©IOP Publishing2007
Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial CantileversTrunek, Neudeck, SpryMaterials Science Forum, vol. 556-557, pp. 117-120 ©Trans Tech Publications2007
SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °CNeudeck, Spry, Chen, Okojie, Beheim, Meredith, FerrierMaterials Science Forum, vol. 556-557, pp. 831-834 ©Trans Tech Publications2007
SiC Technology (2nd Edition)NeudeckThe VLSI Handbook, Second Edition, CRC Press2007
Process-Induced Deformations and Stacking Faults in 4H-SiCOkojie, Huang, Dudley, Zhang, P. PirouzMaterials Research Society Symposium Proceedings, vol. 911, pp. 145-150 ©Materials Research Society2006
Experimental Observations of Extended Growth of 4H-SiC Webbed CantileversTrunek, Neudeck, SpryMaterials Science Forum, vol. 527-529, pp. 247-250 ©Trans Tech Publications2006
Recent Results From Epitaxial Growth on Step Free 4H-SiC MesasNeudeck, Trunek, Spry, Powell, Du, Skowronski, Bassim, Mastro, Twigg, Holm, Henry, EddyMaterials Research Society Symposium Proceedings, vol. 911, pp. 85-94 ©Materials Research Society2006
CVD Growth of 3C-SiC on 4H/6H MesasNeudeck, Trunek, Spry, Powell, Du, Skowronski, Huang, DudleyChemical Vapor Deposition, vol. 12, pp. 531-540 ©Wiley-VCH2006
Deep Reactive Ion Etching (DRIE) of High Aspect Ration SiC Microstructures Using a Time-Multiplexed Etch-Passivate ProcessEvans, BeheimMaterials Science Forum, vol. 527-529, pp. 1115-11182006
Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiCBeheim, EvansMaterials Research Society Symposium Proceedings, vol. 911, pp. 329-3342006
Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiCNeudeck, Spry, TrunekMaterials Science Forum, vol. 527-529, pp. 1335-1338 ©Trans Tech Publications2006
Demonstration of 500 °C AC Amplifier Based on SiC MESFET and Ceramic PackagingChen, Spry, NeudeckIMAPS International High Temperature Electronics Conference, pp. 240-246 ©IMAPS2006
Performance of MEMS-DCA SiC Pressure Transducers under Various Dynamic ConditionsOkojie, Page, WolffIMAPS International High Temperature Electronics Conference, pp. 70-75 ©IMAPS2006
Performance of MEMS-DCA SiC Pressure Transducers under Various Dynamic ConditionsOkojie, Nguyen, Nguyen, Savrun, Lukco, Buehler, McCue, KnudsenIMAPS International High Temperature Electronics Conference, pp. 82-86 ©IMAPS2006
Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC MesasPowell, Neudeck, Trunek, AbelMaterials Science Forum, vol. 483-485, pp. 753-756 ©Trans Tech Publications2005
Improved Method of Manufacturing SiC DevicesOkojieNASA Tech Briefs, June 20052005
Inelastic Stress Relaxation in Single Crystal SiC SubstratesOkojieMaterials Science Forum, vol. 457-460, pp. 375-3782004
Residual Stresses and Stacking Faults in N-Type 4H-SiC EpilayersOkojie, Zhang, PirouzMaterials Science Forum, vol. 457-460, pp. 529-532 ©Trans Tech Publications2004
Thermoplastic Deformation and Residual Stress Topography of 4H-SiC WafersOkojie, ZhangMaterials Research Society Symposium Proceedings, vol. 815, pp. 133-138 ©Materials Research Society2004
Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa SurfacesNeudeck, Trunek, PowellMaterials Research Society Symposium Proceedings, vol. 815, pp. 59-64 ©Materials Research Society2004
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms With and Without Extended DefectsTrunek, Neudeck, SpryMaterials Science Forum, vol. 457-460, pp. 261-264 ©Trans Tech Publications2004
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and CantileversNeudeck, Powell, Trunek, SpryMaterials Science Forum, vol. 457-460, pp. 169-174 ©Trans Tech Publications2004
High Breakdown Field P-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC MesasSpry, Trunek, NeudeckMaterials Science Forum, vol. 457-460, pp. 1061-1064 ©Trans Tech Publications2004
Electrical Operation of 6H-SiC MESFET at 500 °C for 500 Hours in Air AmbientSpry, Neudeck, Okojie, Chen, Beheim, Meredith, Mueller, FerrierIMAPS International High Temperature Electronics Conference ©IMAPS2004
Development of SiC-Based Gas Sensors for Aerospace ApplicationsHunter, Neudeck, Xu, Lucko, Trunek, Artale, Lampard, Androjna, Makel, Ward, LiuMaterials Research Society Symposium Proceedings, vol. 815, pp. 287-297 ©Materials Research Society2004
Accelerated Stress Testing of SiC MEMS-DCA Pressure TransducersSavrun, Nguyen, Okojie, BlahaIMAPS International High Temperature Electronics Conference ©IMAPS2004
Reliability Evaluation of Direct Chip Attached Silicon Carbide Pressure TransducersOkojie, Savrun, Nguyen, Nguyen, Blaha3rd International Conference on Sensors2004
SiC-Based Miniature High-Temperature Cantilever AnemometerOkojie, Fralick, SaadNASA Tech Briefs, July 20042004
Reproducible Growth of High-Quality Cubic-SiC LayersNeudeck, PowellNASA Tech Briefs, February 20042004
X-ray Diffraction Measurement of Doping Induced Lattice Mismatch in N-Type 4H-SiC Epilayers Grown on P-Type SubstratesOkojie, Holzheu, Huang, Michael DudleyApplied Physics Letters, vol. 83, no. 10, pp. 1971-1973 ©American Institute of Physics2003
Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC MesasNeudeck, PowellSilicon Carbide: Recent Major Advances, Springer-Verlag2003
Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web GrowthNeudeck, Spry, Trunek, Powell, BeheimMaterials Research Society Symposium Proceedings, vol. 742, pp. K5.2.1-K5.2.6 ©Materials Research Society2003
Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface HeteroepitaxyNeudeck, Powell, Spry, Trunek, Huang, Vetter, Dudley, Skowronski, LiuMaterials Science Forum, vol. 433-436, pp. 213-216 ©Trans Tech Publications2003
Intermodulation Distortion Performance of Silicon Carbide Schottky Barrier RF Mixer DiodesSimons, NeudeckIEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 2, pp. 669-6722003
A Single Crystal SiC Plug-and-Play High Temperature Drag Force TransducerOkojie, Fralick, Saad, Blaha, Adamczyk, FeiereisenThe 12th International Conference on Solid State Sensors, Actuators and Microsystems, pp. 400-403 (IEEE # 03TH8664C) ©IEEE2003
4H- to 3C-SiC Polytypic Transformation During OxidationOkojie, Brillson, Tumakha, Jenseen, Xhang, Pirouz Materials Science Forum, vol. 389-393,pp. 451-454 ©Trans Tech Publications2002
Surface Morphology and Chemistry of 4H- and 6H-SiC After Cyclic OxidationOkojie, Lukco, KeysMaterials Science Forum, vol. 389-393,pp. 1101-1104 ©Trans Tech Publications2002
Homoepitaxial "Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface HeteroepitaxyNeudeck, Powell, A. Trunek, Huang, DudleyMaterials Science Forum, vol. 389-393,pp. 311-314 ©Trans Tech Publications2002
Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web Growth of Thin SiC CantileversNeudeck, Powell, Beheim, Benavage, Abel, Trunek, Spry, Dudley, VetterJournal of Applied Physics, vol. 92, no. 5, pp. 2391-2400 ©American Institute of Physics2002
Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free SurfacesNeudeck, Powell, Trunek, Spry, Beheim, Benavage, Abel, Vetter, DudleyMaterials Science Forum, vol. 389-393, pp. 251-254 ©Trans Tech Publications2002
Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiCTumakha, Brillson, Jessen, Okojie, Lukco, Zhang, PirouzJournal of Vacuum Science & Technology B, vol. 20, no. 2, pp. 554-560 ©American Vacuum Society2002
Reliability Assessment of Ti/TaSi2/Pt Ohmic Contacts on SiC After 1000 h at 600 °COkojie, Lukco, Chen, SpryJournal of Applied Physics, vol. 91, no. 10, pp. 6553-9559 ©American Institute of Physics2002
High-Temperature Electronics - A Role for Wide Bandgap Semiconductors?Neudeck, Okojie, ChenProceedings of the IEEE, vol. 90, no. 6, pp. 1065-1076 ©IEEE2002
Design Considerations for Bulk Micromachined 6H-SiC High-g Piezoresistive AccelerometersOkojie, Atwell, Kornegay, Roberson, BeliveauTechnical Digest of the 15th IEEE International Conference on MEMS, p. 618-622 (IEEE # 02CH37266) ©IEEE2002
Observation of Oxidation-Induced 4H-SiC-3C-SiC Polytypic TransformationOkojie, Brillson, Tumakha, Jenseen, Xhang, Pirouz Applied Physics Letters, vol. 79, no. 19, pp. 3056-3058 ©American Institute of Physics2001
Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiCOkojie, Lukco, Chen, Spry, C. SalupoMaterials Research Society Symposia Proceedings, vol. 640 ©Materials Research Society2001
Silicon Carbide Electronic DevicesNeudeckEncyclopedia of Materials: Science and Technology, Elsevier Science, vol. 9, pp. 8508-85192001
Characteristics of Hermetic 6H-SiC Pressure Sensor at 600 COkojie, Beheim, Saad, SavrunAIAA Space 2001 Conference and Exposition, AIAA Paper No. 2001-46522001
Growth of Step-Free Surfaces on Device-Size (0001)SiC MesasPowell, Neudeck, Trunek, Beheim,Matus, Hoffmann, KeysApplied Physics Letters, vol. 77, no. 10, pp. 1449-1451 ©American Institute of Physics2000
Stable Ti/TaSi2/Pt Ohmic Contacts on N-Type 6H-SiC Epilayer at 600C in AirOkojie, Spry, Krotine, Salupo, WheelerMaterials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society2000
Deep RIE Process for Silicon Carbide Power Electronics and MEMSBeheim, SalupoMaterials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society2000
600 C Logic Gates Using Silicon Carbide JFET'sNeudeck, Beheim, SalupoGovernment Microcircuit Applications Conference Technical Digest, pp. 421-4242000
Electrical Impact of SiC Structural Crystal Defects on High Electric Field DevicesNeudeckMaterials Science Forum, vol. 338-342, pp. 1161-11662000
Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky DiodesSchnabel, Tabib-Azar, Neudeck, Bailey, Su, Dudley, RaffaelleMaterials Science Forum, vol. 338-342, pp. pp. 489-492 ©Trans Tech Publications2000
Investigations of Non-Micropipe X-ray Imaged Crystal Defects in SiC DevicesNeudeck, Kuczmarski, Dudley, Vetter, Su, Keys, TrunekMaterials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society2000
SiC TechnologyNeudeckThe VLSI Handbook, CRC Press and IEEE Press, 2000, pp. 6.1-6.242000
Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 1: DC PropertiesNeudeck, Huang, DudleyIEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 478-484 ©IEEE1999
Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 2: Dynamic Pulse-Breakdown PropertiesNeudeck, FaziIEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 485-4921999
Gaseous Etching for the Characterization of Structural Defects in Silicon Carbide Single CrystalsPowell, Larkin, TrunekMaterials Science Forum, vol. 264-268, pp. 421-424 ©Trans Tech Publications1998
Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching PropertiesNeudeck, FaziMaterials Science Forum, vol. 264-268, pp. 1037-10401998
Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient AnalysisNeudeckJournal of Electronic Materials, vol. 27, no. 4, pp. 317-3231998
Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction RectifiersNeudeck, Huang, DudleyMaterials Research Society Symposia Proceedings, vol. 483, pp. 285-294 ©Materials Research Society1998
Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology ImplicationsNeudeck, Huang, Dudley, Fazi,Materials Research Society Symposia Proceedings, vol. 512, pp. 107-112 ©Materials Research Society1998
Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction RectifiersNeudeck, Huang, DudleySolid-State Electronics, vol. 42, no. 12, pp. 2157-2164 ©Elsevier Science Ltd.1998
Process-Induced Morphological Defects in Epitaxial CVD Silicon CarbidePowell, LarkinPhysica Status Solid B, vol. 202, no. 1, pp. 529-5481997
SiC Dopant Incorporation Control Using Site-Competition CVDLarkinPhysica Status Solid B, vol. 202, no. 1, pp. 305-3201997
Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction RectifiersNeudeck, FaziIEEE Electron Device Lett., vol. 18, no. 3, pp. 96-981997
Wide Dynamic Range RF Mixers Using Wide-Bandgap SemiconductorsFazi, NeudeckIEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 49-511997
Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD SiC EpilayersLarkinInstitute of Physics Conference Series, no. 142, pp. 23-281996
Dopant Incorporation Efficiency in CVD Silicon Carbide EpilayersLarkinMaterials Research Society Symposia Proceedings, vol. 410, pp. 337-3441996
Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001)SiC SubstratesPowell, Larkin, Abel, Zhou, PirouzInstitute of Physics Conference Series, no. 142, pp. 77-801996
Sources of Morphological Defects in SiC EpilayersPowell, Larkin, Zhou, PirouzTransactions Third International High Temperature Electronics Conference,pp. II-3 - II - 81996
Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction DiodesNeudeck, Fazi, ParsonsTransactions Third International High Temperature Electronics Conference, pp. XVI-15 - XVI-201996
Progress Towards High Temperature, High Power SiC DevicesNeudeckInstitute of Physics Conference Series, no. 141, pp. 1-61995
Performance Limiting Micropipe Defects in Silicon Carbide WafersNeudeck, PowellIEEE Electron Device Letters, vol. 15, no. 2, pp. 63-651994
Investigation of Defects in Epitaxial 3C-SiC, 4H-SiC and 6H-SiC Films Grown on SiC SubstratesPowell, Larkin, Neudeck, Yang, PirouzInstitute of Physics Conference Series, no. 137, pp. 161-1641994
Site-Competition Epitaxy for Controlled Doping of CVD Silicon CarbideLarkin, Neudeck, Powell, MatusInstitute of Physics Conference Series, no. 137, pp. 51-541994
Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient TechniquesNeudeck, Kang, Petit, Tabib-AzarJournal of Applied Physics, vol. 75, no. 12, pp. 7949-7953 ©American Institute of Physics1994
2000 V 6H-SiC PN Junction DiodesNeudeck, Larkin, Powell, Matus, SalupoInstitute of Physics Conference Series, no. 137, pp. 475-4791994
2000 V 6H‐SiC p‐n Junction Diodes Grown by Chemical Vapor DepositionNeudeck, Larkin, Powell, Matus, SalupoApplied Physics Letters, vol. 64, no. 11, pp. 1386-1388 ©American Institute of Physics1994
Electrical Properties of Epitaxial 3C- and 6H-SiC p-n Junction Diodes Produced Side-by-Side on 6H-SiC WafersNeudeck, Larkin, Starr, Powell, Salupo, MatusIEEE Transactions on Electron Devices, vol. 41, no. 5, pp. 826-835 ©IEEE1994
Silicon Carbide Buried-Gate Junction Field Effect Transistors for High-Temperature Power Electronic ApplicationsNeudeck, Petit, SalupoTransactions Second International High Temperature Electronic Conference, pp. X-23 - X-281994
Greatly Improved 3C-SiC p-n Junction Diodes Grown by Chemical Vapor DepositionNeudeck, Larkin, Starr, Powell, Salupo, MatusIEEE Electron Device Letters, vol. 14, no.3, pp. 136-138 ©IEEE1993
High Voltage 6H-SiC Rectifiers: Prospects and ProgressNeudeck, Larkin, Powell, MatusIEEE 51st Annual Device Research Conference1993
Electrical Characterization of 3C- and 6H-SiC PN Junction Diodes Grown by CVD on Low-Tilt-Angle 6H-SiC WafersNeudeck, Larkin, Starr, Powell, Salupo, MatusWorkshop on SiC Materials and Devices, Charlottesville, Virginia USA1992
Four-Fold Improvement of 3C-SiC PN Junction Diode Blocking Voltage Obtained Through Improved CVD Epitaxy on Low-Tilt-Angle 6H-SiC WafersNeudeck, Larkin, Starr, Powell, Salupo, MatusIEEE International Electron Devices Meeting Technical Diggest, pp. 1003-1005 ©IEEE1992
Growth of Improved Qualtiy 3C-SiC Films on 6H-SiC SubstratesPowell, Larkin, Matus, Choyke, Bradshaw, Henderson, Yoganathan, Yang, PirouzApplied Physics Letters, vol. 56, no. 14, pp. 1353-1355 ©American Institute of Physics1990
Growth of High Quality 6H-SiC Epitaxial Films on Vicinal (0001) 6H-SiC WafersPowell, Larkin, Matus, Choyke, Bradshaw, Henderson, Yoganathan, Yang, PirouzApplied Physics Letters, vol. 56, no. 15, pp. 1442-1444 ©American Institute of Physics1990
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