Patents Library
The below table lists the U.S. patents on SiC technology from the Smart Sensing and Electronics Systems Branch. Many of these patents are available for technology transfer and licensing by contacting Jeanne King of the NASA Glenn Technology Transfer Office.
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US Patent # | Title | Inventor(s) | Year |
---|---|---|---|
11,128,293 | Compensation for device property variation according to wafer location | Krasowski, Prokop, Neudeck, Spry | 2021 |
11,004,802 | Reliability extreme temperature integrated circuits and method for producing the same | Spry, Neudeck | 2021 |
10,515,804 | Single conductor alloy as diffusion barrier system and simultaneous ohmic contact to n- and p-type silicon carbide | Okojie | 2019 |
10,490,550 | Larger-area integrated electrical metallization dielectric structures with stress-managed unit cells for more capable extreme environment semiconductor electronics | Spry, Neudeck | 2019 |
10,433,308 | Intelligent data transfer for multiple sensor networks over a broad temperature range | Krasowski | 2019 |
10,381,455 | Diffusion barrier systems (DBS) for high temperature semiconductor electrical contacts | Okojie | 2019 |
10,256,202 | Durable bond pad structure for electrical connection to extreme environment microelectronic integrated circuits | Spry, Lukco, Neudeck, Chang, Chen, Meredith, Moses, Blaha, Gonzalez, Beheim, Laster | 2019 |
10,192,970 | Simultaneous ohmic contact to silicon carbide | Okojie | 2019 |
10,184,777 | Material damage system and method for determining same | Okojie | 2019 |
10,122,363 | Current source logic gate | Krasowski, Prokop, Neudeck | 2018 |
9,978,686 | Interconnection of semiconductor devices in extreme environment microelectronic integrated circuit chips | Spry, Neudeck | 2018 |
9,975,765 | Fabricating ultra-thin silicon carbide diaphragms | Okojie | 2018 |
9,872,293 | Intelligent data transfer for multiple sensor networks over a broad temperature range | Krasowski | 2018 |
9,766,053 | Material damage system and method for determining same | Okojie | 2017 |
9,755,645 | Current source logic gate | Krasowski, Prokop | 2017 |
9,452,926 | Dopant selective reactive ion etching of silicon carbide | Okojie | 2016 |
9,046,426 | Modular apparatus and method for attaching multiple devices | Okojie | 2015 |
9,013,002 | Iridium interfacial stack (IRIS) | Spry | 2015 |
8,841,698 | Method for providing semiconductors having self-aligned ion implant | Neudeck | 2014 |
8,373,175 | Dual ohmic contact to N- and P-type silicon carbide | Okojie | 2013 |
8,416,007 | N channel JFET based digital logic gate structure | Krasowski | 2013 |
7,935,601 | Method for providing semiconductors having self-aligned ion implant | Neudeck | 2011 |
7,688,117 | N channel JFET based digital logic gate structure | Krasowski | 2010 |
7,389,675 | Miniaturized metal (metal alloy)/PdOx/SiC hydrogen and hydrocarbon gas sensors | Hunter, Xu, Lukco | 2008 |
7,438,030 | Actuator operated microvalves | Okojie | 2008 |
7,449,065 | Method for the growth of large low-defect single crystals | Powell, Neudeck, Trunek, Spry | 2008 |
6,845,664 | MEMS direct chip attach packaging methodologies and apparatuses for harsh environments | Okojie | 2005 |
6,869,480 | Method for the production of nanometer scale step height reference specimens | Abel, Powell, Neudeck | 2005 |
6,706,549 | Multi-functional micro electromechanical devices and method of bulk manufacturing same | Okojie | 2004 |
6,763,699 | Gas sensors using SiC semiconductors and method of fabrication thereof | Hunter, Neudeck | 2004 |
6,769,303 | Multi-functional micro electromechanical silicon carbide accelerometer | Okojie | 2004 |
6,770,208 | Method for forming MEMS-based spinning nozzle | Okojie | 2004 |
6,783,592 | Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations | Neudeck, Powell | 2004 |
6,794,213 | Method of assembling a silicon carbide high temperature anemometer | Okojie, Fralic, Saad | 2004 |
6,513,730 | MEMS-based spinning nozzle | Okojie | 2003 |
6,647,809 | Silicon carbide high temperature anemometer and method for assembling the same | Okojie, Fralic, Saad | 2003 |
6,426,296 | Method and apparatus for obtaining a precision thickness in semiconductor and other wafers | Okojie | 2002 |
6,461,944 | Methods for growth of relatively large step-free SiC crystal surfaces | Neudeck, Powell | 2002 |
6,488,771 | Method for growing low-defect single crystal heteroepitaxial films | Powell, Neudeck | 2002 |
6,111,452 | Wide dynamic range RF mixers using wide bandgap semiconductors | Fazi, Neudeck | 2000 |
6,165,874 | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon | Powell, Larkin, Neudeck, Matus | 2000 |
5,915,194 | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon | Powell, Larkin, Neudeck, Matus | 1999 |
5,709,745 | Compound semi-conductors and controlled doping thereof | Larkin, Neudeck, Powell, Matus | 1998 |
5,463,978 | Compound semiconductor and controlled doping thereof | Larkin, Neudeck, Powell, Matus | 1995 |
5,363,800 | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers | Larkin, Powell | 1994 |
5,248,385 | Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers | Powell | 1993 |